Thermal Shape Change

Monitor wafer shape change from thermal effects

 

Thermal shape change is characterized, as well as the stress of thin film oxides, nitrides or polymers from thermal processes. Measurement systems are also suitable for characterizing the shape of baffle or monitor wafers.

ADE thermal shape change monitoring equipment is not sensitive to film type, wafer surface reflectivity or other optical abberations that may result from subsurface multilayer stacks in semiconductor wafer manufacturing. The large number of data points used in calculating stress means great precision. This resolution is used to create highly detailed local stress maps.

Calculate global stress (single value) as an in-line measurement, or for more detailed analysis of local and/or global stress, some systems may use an off-line software package, providing optimal data review.